1994. 3. 23 1/3 semiconductor technical data KTC3207 triple diffused npn transistor revision no : 0 high voltage switching application. color tv horizontal dirver application. color tv chroma output application. features high voltage : v (br)ceo =300v. small collector output capacitance : c ob =3.0pf(typ.). maximum rating (ta=25 1 ) dim millimeters a b d e g h k l 1. emitter 2. collector 3. base p to-92l 7.20 max 5.20 max 2.50 max 0.60 max 1.27 1.70 max 0.55 max 14.00 0.50 0.35 min 0.75 0.10 4 f j m o q 25 1.25 1.50 0.10 max depth:0.2 123 b a c q k ff m m n n o h l j d c n g p hh e d h r s 12.50 0.50 r 1.00 s 1.15 max + _ + _ + _ electrical characteristics (ta=25 1 ) characteristic symbol rating unit collector-base voltage v cbo 300 v collector-emitter voltage v ceo 300 v emitter-base voltage v ebo 7 v collector current i c 100 ma base current i b 50 ma collector power dissipation p c 1 w junction temperature t j 150 1 storage temperature range t stg -55 150 1 characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =240v, i e =0 - - 1.0 a emitter cut-off current i ebo v eb =7v, i c =0 - - 1.0 a dc current gain h fe (1) v ce =10v, i c =4ma 20 - - h fe (2) v ce =10v, i c =20ma 30 - 150 collector-emitter saturation voltage v ce(sat) i c =10ma, i b =1ma - - 1.0 v base-emitter saturation voltage v be(sat) i c =10ma, i b =1ma - - 1.0 v transition frequency f t v ce =10v, i c =20ma 50 - - mhz collector output capacitance c ob v cb =20v, i e =0, f=1mhz - 3.0 - pf
1994. 3. 23 2/3 KTC3207 revision no : 0 0 collector current i (ma) c 0.2 base-emitter voltage v (v) be be c i - v 10 dc current gain h fe 500 100 3 1 0.3 collector current i (ma) c h - i v - i c collector current i (ma) 0.3 1 5 0 100 0.05 ce(sat) collector-emitter saturation i - v cce ce collector-emitter voltage v (v) 0 c collector current i (ma) 0 4 8 12 16 20 24 20 40 60 80 100 120 common emitter ta=25 c 6 4 3 2 1 0.6 0.4 i =0.2ma 0 b 0.4 0.6 0.8 1.0 1.2 20 40 60 80 100 common emitter v =10v ce ta=1 0 0 c ta = 25 c ta=-25 c fe c 50 30 10 5 0.5 30 50 100 300 common emitter ta=25 c v =10v common emitter 300 100 50 30 0.5 5 10 30 50 c fe h - i c collector current i (ma) 0.3 1 3 100 500 fe dc current gain h 10 v =20v ce ce v =10v ce v =5v ta=100 c ta=25 c ta=-25 c ce(sat) c voltage v (v) common emitter ta=25 c 30 10 35 0.5 0.1 0.3 0.5 1 3 5 5 3 1 0.5 0.3 0.1 0.5 5 31030 i /i =5 common emitter voltage v (v) c ce(sat) collector-emitter saturation ce(sat) 0.05 100 50 1 0.3 collector current i (ma) c v - i i /i =10 c b b c i / i = 2 b c i /i =5 c b ta=100 c ta=25 c ta=-25 c ce
1994. 3. 23 3/3 KTC3207 revision no : 0 v - i c collector current i (ma) 0.3 1 3 100 0.1 be(sat) base-emitter saturation safe operating area ce collector-emitter voltage v (v) 3 5 500 500 c 1 collector current i (ma) 10 be(sat) c voltage v (v) 53050 10 0.3 0.5 1 3 5 common emitter i /i =5 ta=25 c c b ta=25 c common emitter 500 300 100 50 30 10 50 30 5 c t transition frequency f (mhz) t 10 100 3 1 0.3 collector current i (ma) c f - i v =20v ce ce v =10 v ce v =5v 10 collector output capacitance 1 ob 300 10 3 1 collector-base voltage v (v) cb c - v ob cb c (pf) 5 30 50 100 3 5 30 50 i =0 f=1mhz ta=25 c e 100 30 50 10 3 5 30 50 100 300 single nonrepetitive pulse ta=25 c curves must be derated lineary with increase in temperature * i max.(pulsed) c * c i max.(continous) 30 0 s * 1 ms 10 ms 100ms 500m s * * * dc ope r at ion v max. ceo
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